? semiconductor components industries, llc, 2001 november, 2001 rev. 3 1 publication order number: mjd31/d mjd31, mjd31c (npn), mjd32, mjd32c (pnp) mjd31c and mjd32c are preferred devices complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? electrically similar to popular tip31 and tip32 series ??????????????????? ??????????????????? maximum ratings ?????????? ? ???????? ? ?????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? mjd31 mjd32 ???? ? ?? ? ???? mjd31c mjd32c ?? ?? ?? unit ?????????? ?????????? collectoremitter voltage ??? ??? v ceo ???? ???? 40 ???? ???? 100 ?? ?? vdc ?????????? ?????????? collectorbase voltage ??? ??? v cb ???? ???? 40 ???? ???? 100 ?? ?? vdc ?????????? ?????????? emitterbase voltage ??? ??? v eb ??????? ??????? 5 ?? ?? vdc ?????????? ? ???????? ? ?????????? collector current continuous peak ??? ? ? ? ??? i c ??????? ? ????? ? ??????? 3 5 ?? ?? ?? adc ?????????? ?????????? base current ??? ??? i b ??????? ??????? 1 ?? ?? adc ?????????? ? ???????? ? ?????????? total power dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ??? p d ??????? ? ????? ? ??????? 15 0.12 ?? ?? ?? watts w/ c ?????????? ? ???????? ? ? ???????? ? ?????????? total power dissipation (note 1) @ t a = 25 c derate above 25 c ??? ? ? ? ? ? ? ??? p d ??????? ? ????? ? ? ????? ? ??????? 1.56 0.012 ?? ?? ?? ?? watts w/ c ?????????? ?????????? operating and storage junction temperature range ??? ??? t j , t stg ??????? ??????? 65 to +150 ?? ?? c 1. these ratings are applicable when surface mounted on the minimum pad size recommended. http://onsemi.com marking diagrams dpak case 369a style 1 silicon power transistors 3 amperes 40 and 100 volts 15 watts dpak straight leads case 369 style 1 preferred devices are recommended choices for future use and best overall value. mjd3xx yww mjd3xx = specific device code xx = 1, 1c, 2 or 2c y = year ww = work week see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 1 4 1 4 mjd3xx yww
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????? ?????????????????? characteristic ????? ????? symbol ????????? ????????? max ???? ???? unit ?????????????????? ?????????????????? thermal resistance, junction to case ????? ????? r q jc ????????? ????????? 8.3 ???? ???? c/w ?????????????????? ?????????????????? thermal resistance, junction to ambient (note 2) ????? ????? r q ja ????????? ????????? 80 ???? ???? c/w ?????????????????? ?????????????????? lead temperature for soldering purposes ????? ????? t l ????????? ????????? 260 ???? ???? c 2. these ratings are applicable when surface mounted on the minimum pad size recommended. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? characteristic ????? ????? symbol ????? ????? min ????? ????? max ???? ???? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? collectoremitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) mjd31, mjd32 mjd31c, mjd32c ????? ? ??? ? ? ??? ? ????? v ceo(sus) ????? ? ??? ? ? ??? ? ????? 40 100 ????? ? ??? ? ? ??? ? ????? ???? ? ?? ? ? ?? ? ???? vdc ?????????????????? ? ???????????????? ? ?????????????????? collector cutoff current (v ce = 40 vdc, i b = 0) mjd31, mjd32 (v ce = 60 vdc, i b = 0) mjd31c, mjd32c ????? ? ??? ? ????? i ceo ????? ? ??? ? ????? ????? ? ??? ? ????? 50 ???? ? ?? ? ???? m adc ?????????????????? ? ???????????????? ? ?????????????????? collector cutoff current (v ce = rated v ceo , v eb = 0) ????? ? ??? ? ????? ices ????? ? ??? ? ????? ????? ? ??? ? ????? 20 ???? ? ?? ? ???? m adc ?????????????????? ? ???????????????? ? ?????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ? ??? ? ????? i ebo ????? ? ??? ? ????? ????? ? ??? ? ????? 1 ???? ? ?? ? ???? madc ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ?????????????????? ? ???????????????? ? ? ???????????????? ? ?????????????????? dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) ????? ? ??? ? ? ??? ? ????? h fe ????? ? ??? ? ? ??? ? ????? 25 10 ????? ? ??? ? ? ??? ? ????? 50 ???? ? ?? ? ? ?? ? ???? ?????????????????? ? ???????????????? ? ?????????????????? collectoremitter saturation voltage (i c = 3 adc, i b = 375 madc) ????? ? ??? ? ????? v ce(sat) ????? ? ??? ? ????? ????? ? ??? ? ????? 1.2 ???? ? ?? ? ???? vdc ?????????????????? ? ???????????????? ? baseemitter on voltage (i c = 3 adc, v ce = 4 vdc) ????? ? ??? ? v be(on) ????? ? ??? ? ????? ? ??? ? 1.8 ???? ? ?? ? vdc ????????????????????????????????? ? ??????????????????????????????? ? dynamic characteristics ?????????????????? ? ???????????????? ? ?????????????????? current gain bandwidth product (note 4) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) ????? ? ??? ? ????? f t ????? ? ??? ? ????? 3 ????? ? ??? ? ????? ???? ? ?? ? ???? mhz ?????????????????? ? ???????????????? ? ?????????????????? smallsignal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) ????? ? ??? ? ????? h fe ????? ? ??? ? ????? 20 ????? ? ??? ? ????? ???? ? ?? ? ???? 3. pulse test: pulse width 300 m s, duty cycle 2%. 4. f t = ? h fe ?? f test .
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 3 0.03 i c , collector current (amps) 5 0.07 0.3 3 70 30 300 h fe , dc current gain v ce = 2 v t j = 150 c 100 0.1 0.7 25 c -55 c 50 0.05 0.5 1 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time test circuit figure 3. dc current gain 3 0.03 i c , collector current (amps) 0.03 0.05 0.07 0.1 0.2 0.5 0.7 3 i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t, time (s) m 0.3 2 1 0.7 0.5 0.3 t s 0.2 0.1 0.07 0.05 12 figure 4. turnon time 2 i c , collector current (amps) 0.02 i c /i b = 10 t j = 25 c t, time (s) m 1 0.7 0.5 0.3 0.1 0.07 0.05 0.03 0.003 figure 5. aono voltages i c , collector current (amps) 1 0.8 v, voltage (volts) 1.4 1.2 0.4 0 +11 v 25 m s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. 500 7 10 0.03 0.07 0.3 3 0.1 0.7 0.05 0.5 1 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v 0.6 0.2 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2 v v ce(sat) @ i c /i b = 10 t f @ v cc = 30 v t f @ v cc = 10 v 2.5 0 2 1.5 1 0.5 t a t c figure 6. turnoff time t a (surface mount) t c typical characteristics
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 4 v ce , collector-emitter voltage (volts) 5 i b , base current (ma) 10 20 1.2 0.4 0 50 100 200 500 2 0.8 t j = 25 c 1.6 2 1 i c = 0.3 a 1000 figure 7. collector saturation region 300 v r , reverse voltage (volts) capacitance (pf) c eb 0.1 200 100 0.5 1 10 40 t j = +25 c t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal resistance (normalized) r q jc(t) = r(t) r q jc r q jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse 0.01 figure 8. capacitance 0.7 d = 0.5 figure 9. thermal response 1 a 3 a 70 50 30 0.2 0.3 2 3 5 20 30 c cb 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 0.1 0.05 0.01 i c , collector current (amps) 10 1.5 v ce , collector-emitter voltage (volts) 0.01 3 150 1 0.3 0.2 3 0.05 0.03 wire bond limit thermal limit second breakdown limit 5 7 20 70 10 t c = 25 c single pulse t j = 150 c 100 m s 1ms dc 2 0.02 0.1 0.5 2 5 figure 10. active region safe operating area 50 30 100 curves apply below rated v ceo 500 m s mjd31, mjd32 mjd31c, mjd32c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 9. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 5 minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm ordering information device package shipping mjd31c dpak 75 units / rail mjd31crl dpak 1800 tape & reel mjd31ct4 dpak 2500 tape & reel mjd31c1 dpak straight leads 75 units / rail mjd31t4 dpak 2500 tape & reel mjd32c dpak 75 units / rail mjd32crl dpak 1800 tape & reel mjd32ct4 dpak 2500 tape & reel mjd32c1 dpak straight leads 75 units / rail mjd32rl dpak 1800 tape & reel mjd32t4 dpak 2500 tape & reel
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 6 package dimensions dpak case 369a13 issue aa dpak case 36907 issue m style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 7 notes
mjd31, mjd31c (npn), mjd32, mjd32c (pnp) http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd31/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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